Infineon IPD42DP15LMATMA1

Power MOSFET, P Channel, 150 V, 9 A, 0.3345 ohm, TO-252 (DPAK), Surface Mount

Infineon PChannelMOSFETTube, Vds=150 V, 9 A, DPAK (TO-252)encapsulation, surface mount, 3Pin

P-Channel 150 V 1.7A (Ta), 9A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3

Power Field-Effect Transistor, 9A I(D), 150V, 0.42ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon IPD42DP15LMATMA1 MOSFET

场效应管, MOSFET, P沟道, 150V, TO-252-3;

OptiMOS™ P-channel MOSFETs 150V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.