Infineon IPD25DP06LMATMA1
$ 0.539
Obsolete
Price and Stock
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SKU
Min
Pkg
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Inventory History
3 month trend: -3.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD25DP06LMATMA1.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-03-26
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2023-12-31
LTD Date2024-06-30
Descriptions
Descriptions of Infineon IPD25DP06LMATMA1 provided by its distributors.
Mosfet, P-Ch, -60V, -6.5A, 175Deg C, 28W Rohs Compliant: Yes |Infineon IPD25DP06LMATMA1
Transistor MOSFET P-CH 60V 6.5A 3-Pin TO-252 T/R
Infineon PChannelMOSTube, Vds=60 V, 6.5 A, TO-252encapsulation, surface mount, 3Pin
Trans MOSFET P-CH 60V 6.5A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 6.4A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -3.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252
Number of Terminals2
Technical
Continuous Drain Current (ID)6.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vds)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation28 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation28 W
Turn-Off Delay Time22 ns
Turn-On Delay Time3 ns
Dimensions
Height2.5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD25DP06LMATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements