Infineon IPB60R080P7ATMA1

Name: Infineon IPB60R080P7ATMA1
Brand: Infineon
SKU: IPB60R080P7ATMA1

MOSFET N-CH 650V 37A D2PAK / N-Channel 650 V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3

$ 2.15

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Distributor		SKU		Min	Pkg
Newark		IPB60R080P7ATMA1	897	1	Cut Tape	5.040	3.340	2.380	2.250	2.250
Arrow Electronics		IPB60R080P7ATMA1	1,000	1		2.257	2.257	2.257	2.257	2.257
Rochester Electronics		IPB60R080P7ATMA1	552					1.840	1.650	1.550	5h
DigiKey	3	IPB60R080P7ATMA1CT-ND	1,516	1	Cut Tape	5.380	3.569	2.544	2.256	2.256
Avnet		IPB60R080P7ATMA1	0	1K					2.106	1.890	8h

Inventory History

3 month trend: +19.53%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet14 pages0 years ago

Future Electronics

Inventory History

3 month trend:

+19.53%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-09-29

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IPB60R080P7ATMA1 provided by its distributors.

MOSFET N-CH 650V 37A D2PAK / N-Channel 650 V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3

Win Source

Power MOSFET, N Channel, 600 V, 37 A, 0.069 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Trans MOSFET N-CH 600V 37A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 37A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Mosfet, N-Ch, 600V, 37A, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPB60R080P7ATMA1

Newark

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Infineon