Infineon IPB110P06LMATMA1
$ 2.032
Production
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Min
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Bulk Pricing
Inventory History
3 month trend: +28.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB110P06LMATMA1.
CAD Models
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Supply Chain
Country of OriginAustria, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-04-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IPB110P06LMATMA1 provided by its distributors.
Transistor MOSFET P-CH 60V 100A 3-Pin TO-263 T/R
Power Field-Effect Transistor, 100A I(D), 60V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
OptiMOS™ P-channel MOSFETs 60V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +28.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263
Contact PlatingTin
Number of Terminals2
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Turn-Off Delay Time277 ns
Turn-On Delay Time22 ns
Dimensions
Height4.5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB110P06LMATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements