Infineon IMZA65R020M2HXKSA1
$ 9.081
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Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-03-05
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Descriptions
Descriptions of Infineon IMZA65R020M2HXKSA1 provided by its distributors.
Sil Carb Mosfet, Single, N Channel, 83A; |Infineon Technologies IMZA65R020M2HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 83 A, 650 V, 0.018 ohm, TO-247
Power Field-Effect Transistor, 83A I(D), 650V, 0.024ohm, 1-Element, N-Channel, Silicon Carbide, Trench Mosfet FET, TO-247
The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageTO-247
Number of Terminals4
Technical
Continuous Drain Current (ID)83 A
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vds)650 V
Max Operating Temperature175 °C
Max Power Dissipation273 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1