Infineon BSZ0804LSATMA1
$ 0.737
Obsolete
Price and Stock
Authorized Distributors
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SKU
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Bulk Pricing
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-10-20
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
Descriptions
Descriptions of Infineon BSZ0804LSATMA1 provided by its distributors.
Mosfet, N-Ch, 100V, 40A, Tsdson-Fl Rohs Compliant: Yes |Infineon BSZ0804LSATMA1
Transistor MOSFET N-Channel 100V 40A 8-Pin TSDSON
Infineon NChannelMOSTube, Vds=100 V, 40 A, TSDSON-8 FLencapsulation, surface mount, 8Pin
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R
Power Field-Effect Transistor, 40A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1 mm 2.1 W 1 5.7 ns 21 ns 150 °C -55 °C 8.2 mΩ
IC REG LIN 3.3V 100MA TSOT23-5
N-CH 100V 40A 8,2mOhm TSDSON8FL
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.Click here to view full portfolio.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9.6 mΩ
Drain to Source Voltage (Vds)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.1 W
Turn-Off Delay Time21 ns
Turn-On Delay Time5.7 ns
Dimensions
Height1 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements