Descriptions of Infineon BSC0804LSATMA1 provided by its distributors.
MOSFET, N-CH, 100V, 40A, TDSON; Available until stocks are exhausted Alternative available
Mosfet, N-Ch, 100V, 40A, Tdson Rohs Compliant: Yes |Infineon BSC0804LSATMA1
Power MOSFET, N Channel, 100 V, 40 A, 0.008 ohm, TDSON, Surface Mount
83W(Tc), 20V, 2.3V@36µA, 14.6nC@4.5V, 1 N-Ch, 100V, 9.6mΩ@20A,10V, 40A, 2.1nF@50V, TDSON-8, SMD
Trans MOSFET N-CH 100V 14A 8-Pin TDSON EP T/R
Power Field-Effect Transistor, 72A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 100V, 40A, TDSON;
100V, N-CH MOSFET, LOGIC LEVEL,
MOSFET N-CH 100V 40A TDSON-8-6
1 mm 3 W 1 4.7 ns 15 ns 175 °C -55 °C 8 mΩ
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.Click here to view full portfolio.