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Datasheets & Documents
Download datasheets and manufacturer documentation for GaN Systems GS66504B-TR.
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Descriptions
Descriptions of GaN Systems GS66504B-TR provided by its distributors.
Bottom Side Cooled 650 V E-mode GaN Transistor
Power Field-Effect Transistor, 15A I(D), 650V, 0.13ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
Manufacturer Aliases
GaN Systems has several brands around the world that distributors may use as alternate names. GaN Systems may also be known as the following names:
- GAN SYSTEMS INC
- GaNPower
- GaN Systems / Infineon
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Resistance130 mΩ
Max Operating Temperature150 °C
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Datasheets & Documents
Download datasheets and manufacturer documentation for GaN Systems GS66504B-TR.