Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi H11D3.
Official Datasheet19 years ago
CAD Models
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Supply Chain
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date1979-04-05
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2007-10-20
LTD Date2008-04-20
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Descriptions
Descriptions of onsemi H11D3 provided by its distributors.
Optocoupler with NPN Phototransistor DC-In 200V 100mA 6-Pin DIP
6-DIP (0.300 7.62mm) 1 DC Obsolete Optoisolator Transistor Output 20% @ 10mA 5300Vrms 80mA -55C~100C
Opto-coupler 5.3kVrms Transistor with Base 6-DIP Tube
Transistor Output Optocouplers DIP-6 HV PHOTO TRAN
Transistor Output Optocoupler, 1-Element
1 DIP-6 Through hole mounting 8.89mm*6.86mm*5.08mm
OPTOISO 5.3KV TRANS W/BASE 6DIP
The H11DX and 4N38 are photo transistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon photo transistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins6
Technical
Collector Emitter Breakdown Voltage200 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)400 mV
Current Transfer Ratio20 %
Forward Current60 mA
Forward Voltage1.5 V
Isolation Voltage1000 Vrms
Max Collector Current100 mA
Max Operating Temperature100 °C
Max Power Dissipation250 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel100 mA
Output Voltage200 V
PackagingBulk
Rise Time5 µs