Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download onsemi FQAF11N90 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Ultra Librarian | SymbolFootprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
Descriptions
Descriptions of onsemi FQAF11N90 provided by its distributors.
900V N-Channel MOSFET | MOSFET N-CH 900V 7.2A TO-3PF
900V N-CHANNEL MOSFET Power Field-Effect Transistor, 7.2A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel 900V 7.2A (Tc) 120W (Tc) Through Hole TO-3PF
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSC
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.2 A
Current Rating7.2 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance960 mΩ
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.5 nF
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation120 W
Rds On Max960 mΩ
Rise Time135 ns
Turn-Off Delay Time165 ns
Turn-On Delay Time60 ns
Voltage Rating (DC)900 V
Dimensions
Height16.7 mm
Length15.7 mm
Width5.7 mm