Diodes Inc. ZXMP4A57E6QTA
$ 0.35
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Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZXMP4A57E6QTA.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-20
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descriptions
Descriptions of Diodes Inc. ZXMP4A57E6QTA provided by its distributors.
MOSFET BVDSS: 31V~40V SOT26 T&R / P-Channel 40 V 2.9A (Ta) 1.1W (Ta) Surface Mount SOT-26
Trans MOSFET P-CH 40V 2.9A Automotive 6-Pin SOT-26 T/R
ZXMP4A57E6 Series 40 V 1.7 W 3.7 A P-Channel MOSFET SOT-26
P-CHANNEL ENHANCEMENT MODE MOSFET, 40V VDS, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 2.9A I(D), 40V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 31V~40V SOT26 T&R
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technical Specifications
Physical
Number of Terminals6
Technical
Continuous Drain Current (ID)2.9 A
Drain to Source Resistance80 mΩ
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZXMP4A57E6QTA.