STMicroelectronics STP40N60M2
Production
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Weight329.988449 mg
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max88 mΩ
Rise Time13.5 ns
Threshold Voltage2 V
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Dimensions
Height19.68 mm
Inventory History
3 month trend: -0.31%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STP40N60M2.
관련 부품
STMicroelectronicsSTF40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTF34NM60ND
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP
STMicroelectronicsSTF34NM60N
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220FP
설명
유통업체에서 제공한 STMicroelectronics STP40N60M2에 대한 설명입니다.
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
Single N-Channel 650 V 0.088 O 250 W Flange Mount Power Mosfet - TO-220-3
Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 34A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.31%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Weight329.988449 mg
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max88 mΩ
Rise Time13.5 ns
Threshold Voltage2 V
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Dimensions
Height19.68 mm