Vishay SIS932EDN-T1-GE3

Dual N-Channel 30 V 6 A 2.3 W Surface Mount MOSFET - POWERPAK-1212-8
Datasheet

가격 및 재고

공인 유통업체
비공인 재고 유통업체
비공인 딜러

기술 사양

Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels2
Power Dissipation2.6 W
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Dimensions
Height1.17 mm

문서

Vishay SIS932EDN-T1-GE3에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

element14 APAC
Datasheet7 pages6 years ago
Future Electronics
Datasheet7 pages4 years ago
Upverter
Technical Drawing1 pages7 years ago

재고 내역

3 month trend:
-17.54%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SIS932EDN-T1-GE3.

설명

유통업체에서 제공한 Vishay SIS932EDN-T1-GE3에 대한 설명입니다.

Dual N-Channel 30 V 6 A 2.3 W Surface Mount MOSFET - POWERPAK-1212-8
Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R
MOSFET, DUAL N-CH, 60V, POWERPAK 1212; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
MOSFET N-CH DL 30V PWRPAK 1212-8

제조업체 별칭

Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

기술 사양

Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels2
Power Dissipation2.6 W
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Dimensions
Height1.17 mm

문서

Vishay SIS932EDN-T1-GE3에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

element14 APAC
Datasheet7 pages6 years ago
Future Electronics
Datasheet7 pages4 years ago
Upverter
Technical Drawing1 pages7 years ago

규정 준수

환경 분류
RoHSNon-Compliant
규정 준수 정책
Rohs Statement5 pages12 years ago