Vishay SI2304DDS-T1-GE3

Name: Vishay SI2304DDS-T1-GE3
Brand: Vishay
SKU: SI2304DDS-T1-GE3
Price: 0.41 USD
Availability: InStock

Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3

Datasheet

가격 및 재고

Distributor		SKU		MOQ	Pkg
Mouser		781-SI2304DDS-GE3	95,386	1	Tape & Reel	0.410	0.313	0.177	0.118	0.094	1d
Avnet	2	23T8495	445	1		0.445	0.314	0.203	0.203	0.203	18h
Verical	5	SI2304DDS-T1-GE3	75,000	3K						0.084	1d
Arrow Electronics	2	SI2304DDS-T1-GE3	1,507	1	Cut Tape	0.392	0.285	0.148	0.087	0.087	10h
DigiKey	3	SI2304DDS-T1-GE3CT-ND	48,808	1	Cut Tape	0.410	0.318	0.191	0.120	0.120	1d

기술 사양

Physical

Case/PackageSOT-23

Contact PlatingTin

MountSurface Mount

Number of Pins3

Weight1.437803 g

Technical

Continuous Drain Current (ID)3.6 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance49 mΩ

Drain to Source Voltage (Vdss)30 V

Element ConfigurationSingle

Fall Time22 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance35 pF

Max Operating Temperature150 °C

Max Power Dissipation200 mW

Min Operating Temperature-55 °C

Nominal Vgs2.2 V

Number of Channels1

Number of Elements1

PackagingDigi-Reel®

Power Dissipation1.1 W

Rds On Max850 mΩ

Resistance60 mΩ

Rise Time50 ns

Schedule B8541290080

Threshold Voltage2.2 V

Turn-Off Delay Time12 ns

Turn-On Delay Time12 ns

Inventory History

3 month trend: -2.95%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

문서

Vishay SI2304DDS-T1-GE3에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Farnell

Datasheet10 pages11 years ago

Datasheet7 pages13 years ago

Datasheet7 pages14 years ago

Datasheet10 pages9 years ago

element14 APAC

Datasheet10 pages8 years ago

Newark

Datasheet10 pages8 years ago

Datasheet10 pages10 years ago

Future Electronics

Datasheet10 pages4 years ago

TME

Datasheet10 pages5 years ago

RS (Formerly Allied Electronics)

Datasheet10 pages8 years ago

재고 내역

3 month trend:

-2.95%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2304DDS-T1-GE3.

설명

유통업체에서 제공한 Vishay SI2304DDS-T1-GE3에 대한 설명입니다.

Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3

Future Electronics

Transistor, MOSFET, N-ch, 30V(d-s), 3.3A, SOT23-3, SMD

Sensible Micro

Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Semicontronic

MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.3A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V

element14 APAC

N Channel Mosfet, 30V, 3.6A, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V Rohs Compliant: No |Vishay SI2304DDS-T1-GE3.

Newark