공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonAUIRLR2703TRL
MOSFET N-CH 30V 20A DPAK / N-Channel 30 V 20A (Tc) 45W (Tc) Surface Mount D-Pak
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
설명
유통업체에서 제공한 Vishay SUD19P06-60-GE3에 대한 설명입니다.
Single P-Channel 60 V 0.06 Ohms Surface Mount Power Mosfet - TO-252
Power MOSFET, P Channel, 60 V, 18.3 A, 0.048 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 18.3A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, 60V, 18.3A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:38.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)18.3 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time65 ns
Turn-On Delay Time8 ns
Dimensions
Height2.507 mm
Length6.73 mm
Width6.22 mm