가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | SQ3456BEV-T1_GE3 | 0 | 1 | Cut Tape | 10h | |||||||
| element14 APAC | SQ3456BEV-T1_GE3 | 0 | 1 | Cut Tape | 21h | |||||||
| Mouser | 78-SQ3456BEV-T1_GE3 | 72 | 1 | Tape & Reel | ||||||||
| Microchip USA | SQ3456BEV-T1_GE3 | 350 | 3K | 1d | ||||||||
| Component Stockers USA | SQ3456BEV-T1_GE3 | 6 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-20
LTD Date2024-06-16
관련 부품
Diodes Inc.DMG6402LVT-7
Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LVT-7
VishaySQ3410EV-T1_GE3
SQ3410EV Series 30 V 8 A Surface Mount Automotive N-Channel Mosfet - TSOP-6
Diodes Inc.DMN3026LVT-7
1.2W(Ta) 20V 2V@ 250¦ÌA 12.5nC@ 10 V 1N 30V 23m¦¸@ 6.5A,10V 6.6A 643pF@15V TSOT-23-6
설명
유통업체에서 제공한 Vishay SQ3456BEV-T1_GE3에 대한 설명입니다.
SQ3456BEV-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 7.8 A, 30 V, 6-PIN TSOP
MOSFET Transistor, N Channel, 7.8 A, 30 V, 0.028 ohm, 10 V, 2.5 V
N-Channel 30 V 7.8 A 35 mOhm 4 W Surface Mount Power MOSFET - TSOP-6
Trans MOSFET N-CH 30V 7.8A Automotive 6-Pin TSOP T/R
Power Field-Effect Transistor, 0.0078A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 7.8A, TSOP6; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Pow
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- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight19.986414 mg
Technical
Continuous Drain Current (ID)7.8 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Operating Temperature175 °C
Max Power Dissipation4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation4 W
Rds On Max35 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time6 ns