공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-28
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
Diodes Inc.DMN3026LVT-7
1.2W(Ta) 20V 2V@ 250¦ÌA 12.5nC@ 10 V 1N 30V 23m¦¸@ 6.5A,10V 6.6A 643pF@15V TSOT-23-6
STMicroelectronicsSTT6N3LLH6
N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
Diodes Inc.DMG6402LVT-7
Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LVT-7
설명
유통업체에서 제공한 onsemi FDC855N에 대한 설명입니다.
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ
N-Channel 30 V 27 mOhm Surface Mount Logic Level PowerTrench® MOSFET-SSOT-6
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.1 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance655 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책