가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | SIR862DP-T1-GE3 | 9,000 | 3K | Tape & Reel | ||||||||
| DigiKey | SIR862DP-T1-GE3CT-ND | 2,985 | 1 | Cut Tape | ||||||||
| TME | SIR862DP-T1-GE3 | 0 | 3K | 23h | ||||||||
| TTI | SIR862DP-T1-GE3 | 0 | 3K | Tape & Reel | 12h | |||||||
| RS (Formerly Allied Electronics) | SIR862DP-T1-GE3 | 0 | 300 | Bulk | 2h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-01-13
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIRA06DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
VishaySIRA04DP-T1-GE3
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
설명
유통업체에서 제공한 Vishay SIR862DP-T1-GE3에 대한 설명입니다.
SIR862DP-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 32 A, 25 V, 8-PIN POWERPAK SO
N Channel 25 V 50 A 2.8 mO 28.4 nC Surface Mount Mosfet -PowerPAK SO-8
Trans MOSFET N-CH 25V 32A 8-Pin PowerPAK SO T/R
Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
5.2W(Ta),69W(Tc) 20V 2.3V@ 250¦ÌA 90nC@ 10 V 1N 25V 2.8m¦¸@ 15A,10V 50A 3.8nF@10V 4.9mm*5.89mm*1.07mm
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
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- Vishay Semiconductors
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)50 A
Drain to Source Resistance2.8 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.8 nF
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Rds On Max2.8 mΩ
Rise Time16 ns
Turn-Off Delay Time39 ns
Turn-On Delay Time28 ns