공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
VishaySIHG25N40D-GE3
MOSFET, N-CH, 400V, 25A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
STMicroelectronicsSTW26NM60ND
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
설명
유통업체에서 제공한 Vishay SIHG22N50D-GE3에 대한 설명입니다.
VISHAY SIHG22N50D-GE3 MOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
Single N-Channel 500 V 0.23 Ohm 98 nC 312 W Silicon Flange Mount Mosfet TO-247AC
POWER MOSFET Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N-CH, 500V, 22A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)22 A
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.938 nF
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation312 W
Rds On Max230 mΩ
Rise Time42 ns
Threshold Voltage3 V
Turn-Off Delay Time47 ns
Turn-On Delay Time21 ns
Dimensions
Height20.82 mm
Length15.87 mm
Width5.31 mm