가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SIHFS11N50A-GE3 | 0 | 1K | 12h | ||||||||
| TTI Europe | SIHFS11N50A-GE3 | 0 | 1K | Tube | 13h | |||||||
| Arrow Electronics | SIHFS11N50A-GE3 | 0 | 1K | |||||||||
| Mouser | 78-SIHFS11N50A-GE3 | 966 | 1 | Tape & Reel | ||||||||
| Component Stockers USA | SIHFS11N50A-GE3 | 4,700 | 3d |
대체 부품
Price @ 1000
$ 0.944
$ 1.365
$ 1.365
Stock
8,598
85,507
85,507
Authorized Distributors
4
5
5
Mount
-
Surface Mount
Surface Mount
Case/Package
-
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
-
500 V
500 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-
-
-
Rds On Max
-
520 mΩ
520 mΩ
Gate to Source Voltage (Vgs)
-
30 V
30 V
Power Dissipation
-
-
-
Input Capacitance
-
1.423 nF
1.423 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay SIHFS11N50A-GE3에 대한 설명입니다.
Power MOSFET N-Channel 500V 11A 3-Pin D2PAK
MOSFET N-CH 500V 11A TO263
170W(Tc) 30V 4V@ 250¦ÌA 52nC@ 10 V 1N 500V 520m¦¸@ 6.6A,10V 11A 1.423nF@25V TO-263 10.67mm*9.65mm*4.83mm
MOSFET N-CHANNEL 500V
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Resistance520 mΩ
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage500 V
Number of Elements1