가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHF28N60EF-GE3 | 0 | 1 | 12h | ||||||||
| Future Electronics | SIHF28N60EF-GE3 | 0 | 50 | Tube | ||||||||
| Avnet | SIHF28N60EF-GE3 | 0 | 1K | 21h | ||||||||
| TTI Asia | SIHF28N60EF-GE3 | 문의하기 | 23h | |||||||||
| TTI Europe | SIHF28N60EF-GE3 | 0 | 3K | Tape & Reel | 23h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHP28N60EF-GE3
250W(Tc) 30V 4V@ 250¦ÌA 120nC@ 10 V 1N 600V 123m¦¸@ 14A,10V 28A 2.714nF@100V TO-220AB 9.01mm
VishaySIHF30N60E-GE3
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
STMicroelectronicsSTF40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTP40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
STMicroelectronicsSTF34NM60ND
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP
설명
유통업체에서 제공한 Vishay SIHF28N60EF-GE3에 대한 설명입니다.
39W(Tc) 30V 4V@ 250¦ÌA 120nC@ 10 V 1N 600V 123m¦¸@ 14A,10V 28A 2.714nF@100V TO-220 16.12mm
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
600V, 28A, 0.123OHM, TO-200FP EF SERIES
MOSFET N-CH 600V 28A FULLPAK220
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance123 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.714 nF
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max123 mΩ
Resistance123 mΩ
Rise Time40 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time24 ns