가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SIHP33N60EF-GE3 | 1,000 | 100 | Tube | 20h | |||||||
| TME | SIHP33N60EF-GE3 | 0 | 1 | 7h | ||||||||
| Newark | SIHP33N60EF-GE3 | 0 | 1K | |||||||||
| Avnet | SIHP33N60EF-GE3 | 0 | 1K | 3d | ||||||||
| Future Electronics | SIHP33N60EF-GE3 | 0 | 5 | Tube |
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
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N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP package
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N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTP40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
InfineonIPA60R125CPXKSA1
IPA60R125CP Series 650 V 25 A 0.125 Ohm CoolMos Power Transistor - TO-220-3
VishaySIHF30N60E-GE3
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
설명
유통업체에서 제공한 Vishay SIHP33N60EF-GE3에 대한 설명입니다.
N-CH 650V 33A EF Series Power MOSFET with Fast Body Diode in TO-220
Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3
278W(Tc) 30V 4V@ 250¦ÌA 155nC@ 10 V 1N 600V 98m¦¸@ 16.5A,10V 33A 3.454nF@100V TO-220AB 9.01mm
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
VISHAY SIHP33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3
Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 33A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.454 nF
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max98 mΩ
Rise Time43 ns
Threshold Voltage4 V
Turn-Off Delay Time161 ns
Turn-On Delay Time28 ns