가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SIA414DJ-T1-GE3 | 1,750 | 1 | |||||||||
| Verical | SIA414DJ-T1-GE3 | 1,750 | 4 | |||||||||
| DigiKey | SIA414DJ-T1-GE3CT-ND | 1,457 | 1 | Cut Tape | ||||||||
| TME | SIA414DJ-T1-GE3 | 0 | 3K | 21h | ||||||||
| Newark | SIA414DJ-T1-GE3 | 0 | 3K | Tape & Reel |
관련 부품
VishaySIA413DJ-T1-GE3
Single P-Channel 12 V 0.029 Ohm Surface Mount Power Mosfet - PowerPAK SC-70-6L
VishaySIB437EDKT-T1-GE3
MOSFET, P CH, ESD, 8V, 9A, PPK SC75; Transistor Polarity:P Channel; Continuous D
설명
유통업체에서 제공한 Vishay SIA414DJ-T1-GE3에 대한 설명입니다.
N Channel 8 V 0.041 O 19 W 32 nC Surface Mount Power MosFet - PPAK-SC-70-6
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET N-CH 8V 12A SC70-6
Power MOSFET, N Channel, 8 V, 12 A, 0.009 ohm, SC-70, Surface Mount
Power Field-Effect Transistor, 12A I(D), 8V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
3.5W(Ta),19W(Tc) 5V 800mV@ 250¦ÌA 32nC@ 5 V 1N 8V 11m¦¸@ 9.7A,4.5V 12A 1.8nF@4V SOT 2.05mm*2.05mm*750¦Ìm
MOSFET N-CH 8V 12A PPAK SC70-6
PowerPAK-SC-70-6L MOSFETs ROHS
MOSFET,N CH,8V,12A,SC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:8V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:5V
제조업체 별칭
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기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage8 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)8 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)5 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation19 W
Min Breakdown Voltage8 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max11 mΩ
Resistance11 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time65 ns
Turn-On Delay Time12 ns
Dimensions
Height750 µm
Length2.05 mm
Width2.05 mm