가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI9933CDY-T1-GE3 | 10,000 | 2500 | 2d | ||||||||
| Newark | SI9933CDY-T1-GE3 | 113 | 1 | Cut Tape | ||||||||
| Arrow Electronics | SI9933CDY-T1-GE3 | 4 | 1 | |||||||||
| Verical | SI9933CDY-T1-GE3 | 1,914 | 138 | |||||||||
| Future Electronics | SI9933CDY-T1-GE3 | 10,000 | 2500 | Tape & Reel |
대체 부품
Price @ 1000
$ 0.303
$ 0.149
Stock
2,668,936
149,731
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SOIC
Drain to Source Voltage (Vdss)
-20 V
-
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
-1.4 V
-1.4 V
Rds On Max
58 mΩ
235 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2 W
-
Input Capacitance
665 pF
665 pF
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-08
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonBSO207PHXUMA1
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs, PG-DSO-8, RoHS
InfineonIRF7379TRPBF
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
InfineonIRF7101TRPBF
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.1Ohm;ID 3.5A;SO-8;PD 2W;VGS +/-12V
Diodes Inc.DMN6066SSD-13
DMN6066SSD Series 60 V 66 mOhm Dual N-Channel Enhancement Mode Mosfet - SOIC-8
Diodes Inc.ZXMC3F31DN8TA
Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
설명
유통업체에서 제공한 Vishay SI9933CDY-T1-GE3에 대한 설명입니다.
Dual P-Channel 20 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8
Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R / MOSFET 2P-CH 20V 4A 8-SOIC
MOSFET, DUAL P-CH, VDS 20V, VGS +/- 20V, RDS(ON) 48MOHM, ID 4A, SO8, PD 3.1W
DUAL P-CHANNEL 20-V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, P Channel, -20V, -4A, Soic-8, Full Reel; Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No |Vishay SI9933CDY-T1-GE3.
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance665 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-50 °C
Nominal Vgs-1.4 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max58 mΩ
Resistance58 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time29 ns
Turn-On Delay Time21 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책