공급망
Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay SI9926CDY-T1-GE3에 대한 설명입니다.
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R
Avnet Japan
2W 12V 1.5V@ 250¦ÌA 33nC@ 10V 2N 20V 18m¦¸@ 8.3A,4.5V 8A 1.2nF@10V SOIC-8 1.75mm
DUAL N CHANNEL MOSFET, 20V, SOIC; Transi; DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.015ohm; Rds(on) Test Voltage Vgs:12V
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No |Vishay SI9926CDY-T1-GE3.
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책