관련 부품
VishaySI4896DY-T1-GE3
Si4896DY Series 80 V 6.7 A 16.5 mOhm Surface Mount N-Channel MOSFET - SOIC-8
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설명
유통업체에서 제공한 Vishay SI7852DP-T1-GE3에 대한 설명입니다.
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO EP T/R
N CHANNEL MOSFET, 80V, 7.6A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
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기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)7.6 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance16.5 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.32 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max16.5 mΩ
Rise Time11 ns
Threshold Voltage2 V
Turn-Off Delay Time40 ns
Turn-On Delay Time17 ns
Dimensions
Height1.12 mm
Length4.9 mm
Width5.89 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책