가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SI7818DN-T1-GE3. | 3,000 | 10 | Cut Tape | 7h | |||||||
| TTI Asia | SI7818DN-T1-GE3 | 문의하기 | 8h | |||||||||
| Mouser | 781-SI7818DN-T1-GE3 | 43,537 | 1 | Tape & Reel | ||||||||
| Win Source | WS-SI7818DN-T1-GE3 | 4,090 | 18 | 5h | ||||||||
| UnikeyIC | SI7818DN-T1-GE3 | 239 | 1 | Tape & Reel | 3h |
대체 부품
Price @ 1000
$ 1.538
$ 0.526
Stock
216,920
196,070
Authorized Distributors
3
5
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
2.2 A
2.2 A
Threshold Voltage
-
4 V
Rds On Max
135 mΩ
135 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.5 W
1.5 W
Input Capacitance
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-01-24
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2024-12-21
LTD Date2025-06-21
관련 부품
VishaySI4848DY-T1-E3
Power MOSFET, N Channel, 150 V, 2.7 A, 85 MilliOhms, NSOIC, 8 Pins, Surface Mount
VishaySI7846DP-T1-E3
Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
VishaySI4488DY-T1-GE3
1.56W(Ta) 20V 2V@ 250¦ÌA (Min) 36nC@ 10 V 1N 150V 50m¦¸@ 5A,10V 3.5A SOIC-8 1.75mm
설명
유통업체에서 제공한 Vishay SI7818DN-T1-GE3에 대한 설명입니다.
Single N-Channel 150 V 0.135 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8
Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R
1.5W(Ta) 20V 4V@ 250¦ÌA 30nC@ 10 V 1N 150V 135m¦¸@ 3.4A,10V 2.2A 3.05mm*3.05mm*1.04mm
Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 150V 3.4A 3.8W 135mohm @ 10V
N CH MOSFET, 150V, 3.4A, POWERPAK; Trans; N CH MOSFET, 150V, 3.4A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):142mohm; Rds(on) Test Voltage Vgs:6V; Threshold Voltage Vgs Typ:4V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
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- Vishay Semiconductor Opto Division
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기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance135 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Rds On Max135 mΩ
Resistance135 MΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm