가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI7469DP-T1-E3 | 12,000 | 3K | 8h | ||||||||
| Newark | SI7469DP-T1-E3 | 8,350 | 1 | Cut Tape | ||||||||
| Future Electronics | SI7469DP-T1-E3 | 15,000 | 3K | Tape & Reel | ||||||||
| Rutronik | TMOSP10083 | 9,000 | 3K | 13h | ||||||||
| DigiKey | SI7469DP-T1-E3CT-ND | 321 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 1.651
$ 1.318
Stock
961,226
1,241,062
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
SOIC
Drain to Source Voltage (Vdss)
-80 V
-80 V
Continuous Drain Current (ID)
10.2 A
10.2 A
Threshold Voltage
-10 V
-3 V
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
83 W
83 W
Input Capacitance
4.7 nF
4.7 nF
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-21
Lifecycle StatusNRND (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Vishay SI7469DP-T1-E3에 대한 설명입니다.
Single P-Channel 80 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO EP T/R / MOSFET P-CH 80V 28A PPAK SO-8
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-28000mA; Drain Source Voltage, Vds:-80V; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:5.2W ;RoHS Compliant: Yes
MOSFET, P CH, 80V, 28A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)10.2 A
Current27 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time220 ns
Schedule B8541290080
Threshold Voltage-10 V
Turn-Off Delay Time95 ns
Turn-On Delay Time45 ns
Voltage80 V
Dimensions
Height1.12 mm
Length4.9 mm
Width5.89 mm