가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI7370DP-T1-E3 | 6,000 | 3K | 2d | ||||||||
| Newark | SI7370DP-T1-E3 | 3,000 | 1 | Cut Tape | ||||||||
| Verical | SI7370DP-T1-E3 | 3,000 | 3K | |||||||||
| Arrow Electronics | SI7370DP-T1-E3 | 3,000 | 3K | |||||||||
| DigiKey | SI7370DP-T1-E3CT-ND | 27,690 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 1.78
$ 1.32
Stock
428,184
303,292
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
9.6 A
9.6 A
Threshold Voltage
4 V
4 V
Rds On Max
11 mΩ
11 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
-
Input Capacitance
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-12
Lifecycle StatusProduction (Last Updated: 2 months ago)
관련 부품
설명
유통업체에서 제공한 Vishay SI7370DP-T1-E3에 대한 설명입니다.
Single N-Channel 60 V 0.011 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
MOSFET, POWER, N-CH, VDSS 60V, RDS(ON) 0.009OHM, ID 9.6A, POWERPAK SO-8,PD 1.9W,-55C
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1.9W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:15.8A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Mosfet, N Channel, 60V, 9.6A, Powerpak So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:1.9W Rohs Compliant: No |Vishay SI7370DP-T1-E3.
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- VSHAY
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- VSHY
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- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)9.6 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.9 W
Rds On Max11 mΩ
Resistance11 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time16 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm