가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4630DY-T1-GE3CT-ND | 4,895 | 1 | Cut Tape | ||||||||
| TME | SI4630DY-T1-GE3 | 0 | 2500 | 6h | ||||||||
| TTI | SI4630DY-T1-GE3 | 0 | 2500 | Tape & Reel | 10h | |||||||
| Newark | SI4630DY-T1-GE3 | 0 | 2500 | Cut Tape | ||||||||
| Avnet | SI4630DY-T1-GE3 | 0 | 2500 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-13
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIRA06DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
설명
유통업체에서 제공한 Vishay SI4630DY-T1-GE3에 대한 설명입니다.
3.5W(Ta),7.8W(Tc) 16V 2.2V@ 250¦ÌA 161nC@ 10 V 1N 25V 2.7m¦¸@ 20A,10V 40A 6.67nF@15V SOIC-8
Trans MOSFET N-CH 25V 27A 8-Pin SOIC N T/R
Power Field-Effect Transistor, 27A I(D), 25V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:36000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0032ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance6.67 nF
Max Operating Temperature150 °C
Max Power Dissipation7.8 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max2.7 mΩ
Rise Time93 ns
Threshold Voltage1 V
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm