가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIR164DP-T1-GE3CT-ND | 2,769 | 1 | Cut Tape | ||||||||
| TME | SIR164DP-T1-GE3 | 0 | 3K | 11h | ||||||||
| TTI | SIR164DP-T1-GE3 | 0 | 3K | Tape & Reel | 13h | |||||||
| Future Electronics | SIR164DP-T1-GE3 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | SIR164DP-T1-GE3 | 0 | 3K | 13h |
관련 부품
VishaySIRA06DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
VishaySIRA04DP-T1-GE3
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
VishaySIR166DP-T1-GE3
SiR166DP Series N-Channel 30 V 0.0040 Ohm 48 W SMT Mosfet - PowerPAK® SO-8
설명
유통업체에서 제공한 Vishay SIR164DP-T1-GE3에 대한 설명입니다.
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
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- Vishay Intertechnologies
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)33.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.95 nF
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Rds On Max2.5 mΩ
Resistance3.2 MΩ
Rise Time41 ns
Threshold Voltage1.2 V
Turn-Off Delay Time52 ns
Turn-On Delay Time35 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm