가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4488DY-T1-E3CT-ND | 5,802 | 1 | Cut Tape | ||||||||
| Avnet | SI4488DY-T1-E3 | 5,000 | 2500 | 18h | ||||||||
| Newark | SI4488DY-T1-E3 | 5,000 | 2500 | Tape & Reel | ||||||||
| Future Electronics | SI4488DY-T1-E3 | 2,500 | 2500 | Tape & Reel | ||||||||
| Verical | SI4488DY-T1-E3 | 54 | 10 |
관련 부품
VishaySI4848DY-T1-E3
Power MOSFET, N Channel, 150 V, 2.7 A, 85 MilliOhms, NSOIC, 8 Pins, Surface Mount
InfineonIRF7421D1TRPBF
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1TRPBF
InfineonIRF7603TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
설명
유통업체에서 제공한 Vishay SI4488DY-T1-E3에 대한 설명입니다.
Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - SOIC-8
N-CHANNEL 150-V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.5A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.1W; No. of Pins:8
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.5 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.56 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time7 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time22 ns
Turn-On Delay Time12 ns
Dimensions
Height1.5494 mm
Length4.9784 mm
Width3.9878 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책