가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF7815TRPBF | 2,445 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7815TRPBF | 1,470 | 1 | |||||||||
| Future Electronics | IRF7815TRPBF | 4,000 | 4K | Tape & Reel | ||||||||
| DigiKey | IRF7815TRPBFCT-ND | 8,786 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRF7815TRPBF | 0 | 10 | Bulk | 21h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF7406TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7421D1TRPBF
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1TRPBF
설명
유통업체에서 제공한 Infineon IRF7815TRPBF에 대한 설명입니다.
Single N-Channel 150 V 43 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
Power MOSFET, N Channel, 150 V, 5.1 A, 0.043 ohm, SOIC, Surface Mount
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 150V, 5.1A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
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- INFIEON
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.1 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time8.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.647 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance43 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max43 mΩ
Resistance43 MΩ
Rise Time3.2 ns
Schedule B8541290080
Turn-Off Delay Time14 ns
Turn-On Delay Time8.4 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm