대체 부품
Price @ 1000
$ 0.348
$ 0.263
Stock
690,517
1,304,158
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
Drain to Source Voltage (Vdss)
12 V
-12 V
Continuous Drain Current (ID)
7.1 A
7.1 A
Threshold Voltage
-400 mV
-400 mV
Rds On Max
35 mΩ
35 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
1.225 nF
1.225 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay SI2333CDS-T1-E3에 대한 설명입니다.
MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity:P Channel; Continuous D
TRANS MOSFET P-CH 12V 5.1A 3-PIN SOT-23 T/R | Siliconix / Vishay SI2333CDS-T1-E3
Single P-Channel 12 V 35 mO 25 nC Surface Mount Power Mosfet - SOT-23
12V 7.1A 35m´Î@4.5V5.1A 2.5W 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 7.1A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -12V, -7.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.0285ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
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Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
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- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
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기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)7.1 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.225 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.25 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage-400 mV
Turn-Off Delay Time45 ns
Turn-On Delay Time13 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm