대체 부품
Price @ 1000
$ 0.428
$ 0.468
Stock
504,668
1,421,915
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-40 V
-40 V
Continuous Drain Current (ID)
2.3 A
2.3 A
Threshold Voltage
-3 V
-3 V
Rds On Max
82 mΩ
82 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
750 mW
750 mW
Input Capacitance
470 pF
470 pF
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-02-13
LTD Date2025-08-13
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Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 2.7A SOT23-3
설명
유통업체에서 제공한 Vishay SI2319DS-T1-E3에 대한 설명입니다.
Transistor MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
Single P-Channel 40 V 82 mOhms Surface Mount Power Mosfet - SOT-23
Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,P CH,40V,2.3A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:-2.3A; Power Dissipation Pd:750mW; Voltage Vgs Max:-20V
P Channel Mosfet, -40V, 3A, To-236, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V Rohs Compliant: No |Vishay SI2319DS-T1-E3.
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.3 A
Current3 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance470 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max82 mΩ
Resistance82 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time7 ns
Voltage40 V
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm