대체 부품
Price @ 1000
$ 0.426
$ 0.399
Stock
44,742
410,754
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
TO-236
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
3.77 A
3.77 A
Threshold Voltage
-
950 mV
Rds On Max
33 mΩ
33 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
750 mW
750 mW
Input Capacitance
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-30
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-11-03
LTD Date2025-05-03
설명
유통업체에서 제공한 Vishay SI2314EDS-T1-GE3에 대한 설명입니다.
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
Power Field-Effect Transistor, 3.77A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3.77A; Drain Source Voltage Vds:20V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:950mV; Power Dissipation Pd:750mW ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.77 A
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time5.9 µs
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max33 mΩ
Rise Time1.4 µs
Turn-Off Delay Time13.5 µs
Turn-On Delay Time530 ns