대체 부품
이 부품
대체 부품
Price @ 1000
$ 0.518
$ 0.507
Stock
489,551
335
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
2 V
-
Rds On Max
200 mΩ
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
60 W
60 W
Input Capacitance
900 pF
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRL520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
설명
유통업체에서 제공한 onsemi RFP12N10L에 대한 설명입니다.
Transistor RFP12N10L MOSFET N-Channel 100 Volt 12 Amp TO-220
N-Channel 100 V 0.2 O Flange Mount Logic Level Power Mosfet - TO-220AB
N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ
Trans MOSFET N-CH Si 100V 12A 3-Pin(3+Tab) TO-220AB Rail
TRANSISTOR, MOSFET, N, 100V, 12A, TO-220
100 V, 12 A, 0.200 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
TRANSISTOR, MOSFET, N, 100V, 12A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current12 A
Current Rating12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time70 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책