가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRFU9210PBF | 1,497 | 102 | |||||||||
| TME | IRFU9210PBF | 1,497 | 1 | 19h | ||||||||
| DigiKey | IRFU9210PBF-ND | 1,566 | 1 | Tube | ||||||||
| TTI | IRFU9210PBF | 0 | 3K | Tube | 9h | |||||||
| Future Electronics | IRFU9210PBF | 0 | 3K | Tube |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
설명
유통업체에서 제공한 Vishay IRFU9210PBF에 대한 설명입니다.
Single P-Channel 200 V 3 Ohm 25 W Through Hole Power Mosfet - TO-251-3
Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK
HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0Ω , ID = -1.9A ) | MOSFET P-CH 200V 1.9A I-PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
2.5W(Ta),25W(Tc) 20V 4V@ 250¦ÌA 8.9nC@ 10 V 1P 200V 3¦¸@ 1.1A,10V 1.9A 170pF@25V TO-251AA 6.73mm*2.39mm*6.22mm
PCHAN, TO-251AA, 200V IRFU9210PBF
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating-1.9 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance3 Ω
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance170 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation2.5 W
Rds On Max3 Ω
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.38 mm