가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 742-IRFR9110TRLPBFCT-ND | 3,000 | 1 | Cut Tape | ||||||||
| TME | IRFR9110TRLPBF | 0 | 3K | 1h | ||||||||
| Avnet | IRFR9110TRLPBF | 0 | 3K | 5h | ||||||||
| TTI Europe | IRFR9110TRLPBF | 0 | 3K | Tape & Reel | 6h | |||||||
| TTI Asia | IRFR9110TRLPBF | 문의하기 | 6h |
대체 부품
Price @ 1000
$ 0.691
$ 0.364
Stock
130,640
6,568
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
DPAK
-
Drain to Source Voltage (Vdss)
-
-100 V
Continuous Drain Current (ID)
3.1 A
3.1 A
Threshold Voltage
-
-
Rds On Max
1.2 Ω
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
200 pF
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-22
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishayIRFR110PBF
Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)
설명
유통업체에서 제공한 Vishay IRFR9110TRLPBF에 대한 설명입니다.
Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-3.1A; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:DPAK ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Resistance1.2 Ω
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.2 Ω
Rise Time27 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm