공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
VishayIRFR210PBF
MOSFET, POWER, N-CH, VDSS 200V, RDS(ON) 1.5 OHMS, ID 2.6A, TO-252AA, PD 25W, VGS +/-20V
설명
유통업체에서 제공한 Vishay IRFR210TRPBF에 대한 설명입니다.
Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - TO-252
IRFR210TRPBF N-CHANNEL MOSFET TRANSISTOR, 2.6 A, 200 V, 3-PIN TO-252
POWER MOSFET Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time8.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance140 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time17 ns
Schedule B8541290080
Turn-Off Delay Time14 ns
Turn-On Delay Time8.2 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm