공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay IRFR9210PBF에 대한 설명입니다.
Single P-Channel 200 V 3 Ohm 25 W Surface Mount Power Mosfet - TO-252-3
POWER MOSFET Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor Polarity:p Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.9A; On Resistance Rds(On):3Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.2 / Drain-Source Voltage (Vds) V = -200 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = -4 / Fall Time ns = 13 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = Through Hole / Power Dissipation (Pd) W = 25
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)1.9 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance3 Ω
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance170 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max3 Ω
Recovery Time220 ns
Resistance3 Ω
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm