공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-09
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2024-11-18
LTD Date2025-05-18
설명
유통업체에서 제공한 Vishay IRFD123PBF에 대한 설명입니다.
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP
MOSFET N-CH 100V 1.3A 4-DIP / Trans MOSFET N-CH 200V 1.3A 4-Pin HVMDIP
12V, N ch NexFET MOSFET™, single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150
N CHANNEL MOSFET, 100V, 1.3A; Channel Ty; N CHANNEL MOSFET, 100V, 1.3A; Channel Type: N Channel; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 1.3A; Transistor Mounting: Through Hole; Rds(on) Test Voltage: 10V;
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Operating Temperature175 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation1 W
Rds On Max270 mΩ
Resistance270 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8.2 ns