공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-24
Lifecycle StatusObsolete (Last Updated: 9 months ago)
설명
유통업체에서 제공한 Infineon IRFB812PBF에 대한 설명입니다.
MOSFET N CH 500V 3.6A TO220AB N-Channel 500 V 3.6A (Tc) 78W (Tc) Through Hole TO-220AB
MOSFET N CH 500V 3.6A TO220AB / Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube
Single N-Channel 500 V 2.2 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
78W(Tc) 20V 5V@ 250µA 20nC@ 10 V 1individualNChannel 500V 2.2Ω@ 2.2A,10V 3.6A 810pF@25V TO-220AB Through hole mounting 10mm*4.4mm*15.65mm
MOSFET, N CH, 500V, 3.6A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.75ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.2 Ω
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance810 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance2.2 Ω
Package Quantity1000
Power Dissipation78 W
Rds On Max2.2 Ω
Recovery Time110 ns
Resistance2.2 Ω
Rise Time22 ns
Threshold Voltage3 V
Turn-Off Delay Time24 ns
Turn-On Delay Time14 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책