가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6215STRRPBF | 0 | 800 | Bulk | 8h | |||||||
| Win Source | WS-IRF6215STRRPBF | 4,610 | 1 | 17h | ||||||||
| Worldway Electronics | IRF6215STRRPBF | 12,140 | 7 | Tape & Reel | 16h | |||||||
| SHENGYU ELECTRONICS | IRF6215STRRPBF | 9,590 | 1 | 3d | ||||||||
| Bison Technologies | IRF6215STRRPBF-286895 | 800 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRFS5615TRLPBF
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
설명
유통업체에서 제공한 Infineon IRF6215STRRPBF에 대한 설명입니다.
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
Single P-Channel 150 V 0.29 Ohm 66 nC HEXFET® Power Mosfet - D2PAK
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 150V 13A 3-Pin (2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):290mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating-13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance290 mΩ
Package Quantity800
Power Dissipation110 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time36 ns
Schedule B8541290080
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-150 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm