대체 부품
Price @ 1000
$ 1.347
$ 1.347
Stock
59,613
105,853
105,853
Authorized Distributors
0
6
6
Mount
Surface Mount
Surface Mount, Through Hole
Surface Mount, Through Hole
Case/Package
TO-263-3
TO-220-3
TO-220-3
Drain to Source Voltage (Vds)
200 V
200 V
200 V
Continuous Drain Current (ID)
6.5 A
6.5 A
6.5 A
Threshold Voltage
-
-2 V
-2 V
Rds On Max
800 mΩ
800 mΩ
800 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
74 W
3 W
3 W
Input Capacitance
700 pF
700 pF
700 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2008-06-30
LTD Date2008-09-30
설명
유통업체에서 제공한 Vishay IRF9630S에 대한 설명입니다.
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) | MOSFET P-CH 200V 6.5A D2PAK
MOSFET P-CH 200V 6.5A D2PAK
MOSFET P-CHANNEL 200V
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
PCHAN 6.5A 200V 0.80OHM SMD-220
IC FLASH 64M SPI 104MHZ 8WSON
VISHAY TO-263
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)6.5 A
Current Rating-6.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max800 mΩ
Rise Time27 ns
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-200 V
Dimensions
Height4.83 mm
Length10.67 mm
Width9.02 mm