대체 부품
Price @ 1000
$ 1.235
$ 1.07
$ 1.07
Stock
175,071
225,767
225,767
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
-100 V
-100 V
-100 V
Continuous Drain Current (ID)
19 A
19 A
19 A
Threshold Voltage
-4 V
-4 V
-4 V
Rds On Max
200 mΩ
200 mΩ
200 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.7 W
3.7 W
3.7 W
Input Capacitance
1.4 nF
1.4 nF
1.4 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF640NSTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSTRRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
설명
유통업체에서 제공한 Vishay IRF9540SPBF에 대한 설명입니다.
Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3
In a Pack of 5, P-Channel MOSFET, 19 A, 100 V, 3-Pin D2PAK Vishay IRF9540SPBF
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRF9540SPBF.
MOSFET, P, 100V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:100V; Current, Id Cont:19A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:72A; Power, Pd:150W; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time73 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time16 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm