공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
STMicroelectronicsSTP9NK50ZFP
STP9NK50ZFP N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN TO-220FP
STMicroelectronicsSTF10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Vishay IRF840BPBF에 대한 설명입니다.
Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 500V, 8.7A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.7ohm; Available until stocks are exhausted Alternative available
Mosfet, N-Ch, 500V, 8.7A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Vishay IRF840BPBF
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Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance527 pF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max850 mΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time17 ns
Turn-On Delay Time13 ns