공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTF10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
VishaySIHF8N50D-E3
MOSFET, N-CH, 500V, 8.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Dr
STMicroelectronicsSTP11NK40ZFP
N-Channel 400V - 0.49 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET
STMicroelectronicsSTP9NK60ZFP
N-Channel 600 V 950 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
설명
유통업체에서 제공한 STMicroelectronics STP9NK50ZFP에 대한 설명입니다.
STP9NK50ZFP N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN TO-220FP
N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in TO-220FP package
Ciiva
Trans MOSFET N-CH 500V 7.2A 3-Pin(3+Tab) TO-220FP Tube
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 30 W
N-CHANNEL 500V-0.72 OHM-7.2A TO-220FP ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=500 V, 7.2 A, TO-220FP, , 3
MOSFET, N TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.72ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd
Mosfet, N Channel, 500V, 7.2A, To-220Fp-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:7.2A; Tensión Drenaje-Fuente Vds:500V; Resistencia De Activación Rds(On):0.72Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STP9NK50ZFP
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance910 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max850 mΩ
Resistance850 MΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time45 ns
Turn-On Delay Time17 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm