대체 부품
Price @ 1000
$ 1.693
$ 1.68
$ 1.68
Stock
164,186
97,909
97,909
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
250 V
250 V
250 V
Continuous Drain Current (ID)
14 A
14 A
14 A
Threshold Voltage
4 V
-
-
Rds On Max
280 mΩ
280 mΩ
280 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.1 W
3.1 W
3.1 W
Input Capacitance
1.3 nF
1.3 nF
1.3 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF640NSTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
설명
유통업체에서 제공한 Vishay IRF644SPBF에 대한 설명입니다.
Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK
IRF644S Series N-Channel 250 V 280 mOhm Surface Mount Power Mosfet - TO-263
MOSFET N-CH 250V 14A D2PAK | Siliconix / Vishay IRF644SPBF
POWER MOSFET Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 14 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 49 / Rise Time ns = 24 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max280 mΩ
Resistance280 MΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time11 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm