대체 부품
Price @ 1000
$ 1.37
$ 1.438
$ 1.438
Stock
210,581
103,853
103,853
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
28 A
28 A
28 A
Threshold Voltage
-
4 V
4 V
Rds On Max
77 mΩ
77 mΩ
77 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.7 W
3.7 W
3.7 W
Input Capacitance
1.7 nF
1.7 nF
1.7 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
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onsemiHUFA75623S3ST
85W(Tc) 4V@ 250µA 52nC@ 20V 1individualNChannel 100V 64mΩ@ 22A,10V 790pF@25V D2PAK SMD mount
설명
유통업체에서 제공한 Vishay IRF540STRRPBF에 대한 설명입니다.
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R
MOSFET, N-CH, 150W, TO-263/D2PAK-3;
N-Ch MOSFET 100V 28A 77mΩ@17A,10V 1.7nF@25V TO-263 SMD 10.67mm × 9.65mm × 4.83mm 3.7W(Ta) 150W(Tc) 20V 4V@250µA 72nC@10V
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
NCHAN, SMD-220, 100V IRF540STRRPBF
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance77 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max77 mΩ
Rise Time44 ns
Schedule B8541290080
Turn-Off Delay Time53 ns
Turn-On Delay Time11 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm